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M58LR128GB |
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| Part Number | M58LR128GB |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | ..... . . . . . . . . . . 7 Figure 2. Table 1. Figure 3. Table 2. Figure 4. Logic Diagram . . . . . . . . . ... |
| Features |
SUMMARY
■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous Page Read mode – Random Access: 85ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME – 10µs typical Word program time using Buffer Enhanced Factory Program command MEMORY ORGANIZATION – Multiple Bank Memory Array: 8 Mbit Banks – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS – program/erase in one Bank while read in others... |
| Document |
 M58LR128GB Data Sheet
PDF 1.18MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | M58LR128GL |
STMicroelectronics |
128 and 256Mbit 1.8V supply Flash memories |
|
| 2 | M58LR128GT |
STMicroelectronics |
128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory |
|
| 3 | M58LR128GU |
STMicroelectronics |
128 and 256Mbit 1.8V supply Flash memories |
|
| 4 | M58LR128FB |
ST Microelectronics |
Flash Memory |
|
| 5 | M58LR128FT |
ST Microelectronics |
Flash Memory |
|