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M58LT256JSB |
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| Part Number | M58LT256JSB |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | ..... 8 Signal descriptions... . . . . ... |
| Features |
■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O Buffers – VPP = 9 V for fast program Synchronous / Asynchronous Read – Synchronous Burst Read mode: 52 MHz – Random access: 85 ns – Asynchronous Page Read mode Synchronous Burst Read Suspend Programming time – 5 µs typical Word program time using Buffer Enhanced Factory Program command Memory organization – Multiple Bank memory array: 16 Mbit banks – Parameter Blocks (top or bottom location) Dual operations – program/erase in one Bank while read in others – No delay between read and write opera... |
| Document |
 M58LT256JSB Data Sheet
PDF 930.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | M58LT128GSB |
STMicroelectronics |
(M58LT128GSB / M58LT128GST) Flash Memories |
|
| 2 | M58LT128GST |
STMicroelectronics |
(M58LT128GSB / M58LT128GST) Flash Memories |
|
| 3 | M58LT128HSB |
STMicroelectronics |
(M58LT128HSB / M58LT128HST) Flash memories |
|
| 4 | M58LT128HST |
STMicroelectronics |
(M58LT128HSB / M58LT128HST) Flash memories |
|
| 5 | M58LR128FB |
ST Microelectronics |
Flash Memory |
|