M58LT128GST |
Part Number | M58LT128GST |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | .... . . . . . 8 Signal descriptions... . . . . . . . 13 2.1 2... |
Features |
Summary
■ SUPPLY VOLTAGE – VDD = 1.7 to 2.0V for program, erase and read – VDDQ = 2.7 to 3.6V for I/O Buffers – VPP = 9V for fast program SYNCHRONOUS / ASYNCHRONOUS READ – Random Access: 110ns – Asynchronous Page Read: 25ns. – Synchronous Burst Read: 52MHz SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME – 10µs typical Word program time using Buffer Enhanced Factory Program command MEMORY ORGANIZATION – Multiple Bank Memory Array: 8 Mbit Banks – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS – program/erase in one Bank while read in others – No delay between read and write operation... |
Document |
M58LT128GST Data Sheet
PDF 743.65KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M58LT128GSB |
STMicroelectronics |
(M58LT128GSB / M58LT128GST) Flash Memories | |
2 | M58LT128HSB |
STMicroelectronics |
(M58LT128HSB / M58LT128HST) Flash memories | |
3 | M58LT128HST |
STMicroelectronics |
(M58LT128HSB / M58LT128HST) Flash memories | |
4 | M58LT256JSB |
STMicroelectronics |
(M58LT256JSB / M58LT256JST) Flash memories | |
5 | M58LR128FB |
ST Microelectronics |
Flash Memory |