M58LT128GST STMicroelectronics (M58LT128GSB / M58LT128GST) Flash Memories Datasheet, en stock, prix

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M58LT128GST

STMicroelectronics
M58LT128GST
M58LT128GST M58LT128GST
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Part Number M58LT128GST
Manufacturer STMicroelectronics (https://www.st.com/)
Description .... . . . . . 8 Signal descriptions... . . . . . . . 13 2.1 2...
Features Summary
■ SUPPLY VOLTAGE
  – VDD = 1.7 to 2.0V for program, erase and read
  – VDDQ = 2.7 to 3.6V for I/O Buffers
  – VPP = 9V for fast program SYNCHRONOUS / ASYNCHRONOUS READ
  – Random Access: 110ns
  – Asynchronous Page Read: 25ns.
  – Synchronous Burst Read: 52MHz SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME
  – 10µs typical Word program time using Buffer Enhanced Factory Program command MEMORY ORGANIZATION
  – Multiple Bank Memory Array: 8 Mbit Banks
  – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS
  – program/erase in one Bank while read in others
  – No delay between read and write operation...

Document Datasheet M58LT128GST Data Sheet
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