No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
STGW20NC60VD ■ High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and |
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STMicroelectronics |
STGW20NB60HD -Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Storage T emperature Max. Operating Junction Temperature o o Value |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 μs minimum short circuit withstand time at TJ = 150 °C • Safe paralleling • Low thermal resistance • Very fas |
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STMicroelectronics |
STGW20NC60VD ■ High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and |
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STMicroelectronics |
very fast IGBT ■ High frequency operation up to 50 kHz ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ High current capability Applications ■ High frequency inverters ■ UPS, motor drivers ■ HF, SMPS and PFC in both hard switch and resonant topologi |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 µs minimum short circuit withstand time at TJ=150 °C • Tight parameters distribution • Safe paralleling • Low |
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STMicroelectronics |
600V 20A very high speed trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 2 1 1 3 • Tail-less switching off • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resis |
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STMicroelectronics |
very fast IGBT TYPE STGW20NC60VD s s Figure 1: Package IC @100°C 30 A VCES 600 V VCE(sat) (Max) @25°C < 2.5 V s s s s s OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY ENERGY HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz VERY SO |
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STMicroelectronics |
very fast IGBT ■ ■ ■ High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability 1 2 3 1 2 3 Applications ■ ■ ■ TO-247 3 1 TO-220 High frequency inverters UPS, motor drivers HF, SMPS and PFC in bot |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very |
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STMicroelectronics |
1200V 25A low-loss M series IGBT • Maximum junction temperature: TJ = 175 °C • 10 μs of short-circuit withstand time • Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft- and fast-recove |
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STMicroelectronics |
600V 20A high speed trench gate field-stop IGBT • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS, PFC Description This device is an IGBT developed |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameter distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • Uninterruptible power suppl |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 1.55 V (typ.) @ IC = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverter |
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