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STMicroelectronics GW2 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
GW20NC60VD

STMicroelectronics
STGW20NC60VD

■ High current capability
■ High frequency operation up to 50 KHz
■ Very soft ultra fast recovery antiparallel diode Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and
Datasheet
2
GW20NB60HD

STMicroelectronics
STGW20NB60HD
-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Storage T emperature Max. Operating Junction Temperature o o Value
Datasheet
3
STGW25H120DF2

STMicroelectronics
Trench gate field-stop IGBT

• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 2.1 V (typ.) @ IC = 25 A
• 5 μs minimum short circuit withstand time at TJ = 150 °C
• Safe paralleling
• Low thermal resistance
• Very fas
Datasheet
4
20NC60VD

STMicroelectronics
STGW20NC60VD

■ High current capability
■ High frequency operation up to 50 KHz
■ Very soft ultra fast recovery antiparallel diode Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and
Datasheet
5
GW20NC60V

STMicroelectronics
very fast IGBT

■ High frequency operation up to 50 kHz
■ Lower CRES / CIES ratio (no cross-conduction susceptibility)
■ High current capability Applications
■ High frequency inverters
■ UPS, motor drivers
■ HF, SMPS and PFC in both hard switch and resonant topologi
Datasheet
6
STGW25H120F2

STMicroelectronics
Trench gate field-stop IGBT

• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 2.1 V (typ.) @ IC = 25 A
• 5 µs minimum short circuit withstand time at TJ=150 °C
• Tight parameters distribution
• Safe paralleling
• Low
Datasheet
7
STGW20V60DF

STMicroelectronics
600V 20A very high speed trench gate field-stop IGBT

• Maximum junction temperature: TJ = 175 °C
• Very high speed switching series 3 2 1 1 3
• Tail-less switching off
• Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resis
Datasheet
8
STGW20NC60VD

STMicroelectronics
very fast IGBT
TYPE STGW20NC60VD s s Figure 1: Package IC @100°C 30 A VCES 600 V VCE(sat) (Max) @25°C < 2.5 V s s s s s OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY ENERGY HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz VERY SO
Datasheet
9
STGW20NC60V

STMicroelectronics
very fast IGBT



■ High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability 1 2 3 1 2 3 Applications


■ TO-247 3 1 TO-220 High frequency inverters UPS, motor drivers HF, SMPS and PFC in bot
Datasheet
10
GW20V60DF

STMicroelectronics
IGBT

• Maximum junction temperature: TJ = 175 °C
• Very high speed switching series
• Tail-less switching off
• Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very
Datasheet
11
STGW25M120DF3

STMicroelectronics
1200V 25A low-loss M series IGBT

• Maximum junction temperature: TJ = 175 °C
• 10 μs of short-circuit withstand time
• Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
• Tight parameter distribution
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Soft- and fast-recove
Datasheet
12
STGW20H60DF

STMicroelectronics
600V 20A high speed trench gate field-stop IGBT

• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short-circuit rated
• Ultrafast soft recovery antiparallel diode Applications
• Motor control
• UPS, PFC Description This device is an IGBT developed
Datasheet
13
STGW20V60F

STMicroelectronics
IGBT

• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.8 V (typ.) @ IC = 20 A
• Tight parameter distribution
• Safe paralleling
• Low thermal resistance Applications
• Photovoltaic inverters
• Uninterruptible power suppl
Datasheet
14
STGW20H65FB

STMicroelectronics
IGBT

• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.55 V (typ.) @ IC = 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance Applications
• Photovoltaic inverter
Datasheet



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