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STGW20H65FB |
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| Part Number | STGW20H65FB |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduct... |
| Features |
• Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 1.55 V (typ.) @ IC = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • Power factor correction • Welding • High-frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency conve... |
| Document |
 STGW20H65FB Data Sheet
PDF 451.82KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STGW20H60DF |
STMicroelectronics |
600V 20A high speed trench gate field-stop IGBT |
|
| 2 | STGW20NB60H |
ST Microelectronics |
N-CHANNEL IGBT |
|
| 3 | STGW20NB60HD |
ST Microelectronics |
N-CHANNEL IGBT |
|
| 4 | STGW20NB60K |
ST Microelectronics |
N-CHANNEL IGBT |
|
| 5 | STGW20NB60KD |
ST Microelectronics |
N-CHANNEL IGBT |
|