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STGW20V60F |
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| Part Number | STGW20V60F |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and s... |
| Features |
• Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameter distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency c... |
| Document |
 STGW20V60F Data Sheet
PDF 482.81KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STGW20V60DF |
STMicroelectronics |
600V 20A very high speed trench gate field-stop IGBT |
|
| 2 | STGW20H60DF |
STMicroelectronics |
600V 20A high speed trench gate field-stop IGBT |
|
| 3 | STGW20H65FB |
STMicroelectronics |
IGBT |
|
| 4 | STGW20NB60H |
ST Microelectronics |
N-CHANNEL IGBT |
|
| 5 | STGW20NB60HD |
ST Microelectronics |
N-CHANNEL IGBT |
|