| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
STF21NM50N Type VDSS (@Tjmax) RDS(on) ID STB21NM50N )STB21NM50N-1 t(sSTF21NM50N cSTP21NM50N uSTW21NM50N 550V 550V 550V 550V 550V < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω 18A 18A 18A(1) 18A 18A rod1. Limited by wire bonding P ■ 100% avalanche tested te ■ |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB21NM60N )STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω 17 A 17 A 17 A(1) 17 A 17 A rod1. Limited by maximum temperature allo |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB21NM60N )STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω 17 A 17 A 17 A(1) 17 A 17 A rod1. Limited by maximum temperature allo |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB21NM60N )STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω 17 A 17 A 17 A(1) 17 A 17 A rod1. Limited by maximum temperature allo |
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STMicroelectronics |
N-CHANNEL MOSFET Order codes VDSS RDS(on)max ID PW STB21N90K5 250 W STF21N90K5 900 V STP21N90K5 STW21N90K5 40 W < 0.299 Ω 18.5 A 250 W ■ TO-220 worldwide best RDS(on) ■ Worldwide best FOM (figure of merit) ■ Ultra low gate charge ■ 100% avalanche tested ■ Zene |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB21NM60N )STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω 17 A 17 A 17 A(1) 17 A 17 A rod1. Limited by maximum temperature allo |
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STMicroelectronics |
N-channel MOSFET Type STB21NK50Z ■ ■ ■ ■ ■ VDSS 500 V RDS(on) max < 0.27 Ω ID 17 A Pw 190 W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability 3 1 D²PAK Applications |
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STMicroelectronics |
AM/FM TUNER seek” mode and MPX mute during reception. The combination of programmable level detector and IF counter allows reliable AM stop-station performance. The Automatic Gain Control (AGC) operates on different signal bandwidths in order to optimize sensiti |
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STMicroelectronics |
N-CHANNEL MOSFET TYPE STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N ■ ■ Figure 1: Package RDS(on) < < < < < 0.19 0.19 0.19 0.19 0.19 Ω Ω Ω Ω Ω ID 18 A 18 A 18 A (*) 18 A 18 A VDSS (@Tjmax) 550 550 550 550 550 V V V V V 3 1 3 1 2 3 1 2 D2PAK TO-220 T |
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STMicroelectronics |
N-channel MOSFET Order codes STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND VDSS @ TJmax 650 V 650 V 650 V 650 V RDS(on) max 0.22 Ω 0.22 Ω 0.22 Ω 0.22 Ω ID 17 A 17 A 17 A 17 A • Intrinsic fast-recovery body diode • Worldwide best RDS(on)*area amongst the fast r |
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STMicroelectronics |
N-channel Power MOSFET Type STL21N65M5 VDSS @ TJmax 710 V RDS(on) max < 0.190 Ω ID 17 A (1) ' $ 3 3 3 "OTTOM VIEW 1. The value is rated according to Rthj-case ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 0OWER |
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STMicroelectronics |
N-CHANNEL MOSFET Order codes VDSS RDS(on)max ID PW STB21N90K5 250 W STF21N90K5 900 V STP21N90K5 STW21N90K5 40 W < 0.299 Ω 18.5 A 250 W ■ TO-220 worldwide best RDS(on) ■ Worldwide best FOM (figure of merit) ■ Ultra low gate charge ■ 100% avalanche tested ■ Zene |
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STMicroelectronics |
N-Channel MOSFET Order codes VDSS @ TJmax RDS(on) max ID PW STB21N65M5 STF21N65M5 17 A 125 W 17 A(1) 30 W STI21N65M5 710 V < 0.179 Ω STP21N65M5 17 A 125 W STW21N65M5 1. Limited only by maximum temperature allowed ■ Worldwide best RDS(on) * area ■ Higher |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB21NM60N )STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω 17 A 17 A 17 A(1) 17 A 17 A rod1. Limited by maximum temperature allo |
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STMicroelectronics |
N-channel MOSFET Order codes STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND VDSS @ TJmax 650 V 650 V 650 V 650 V RDS(on) max 0.22 Ω 0.22 Ω 0.22 Ω 0.22 Ω ID 17 A 17 A 17 A 17 A • Intrinsic fast-recovery body diode • Worldwide best RDS(on)*area amongst the fast r |
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STMicroelectronics |
N-CHANNEL MOSFET Order codes VDSS @ TJmax RDS(on) max ID PW STB21N65M5 STF21N65M5 17 A 125 W 17 A(1) 30 W STI21N65M5 710 V < 0.179 Ω STP21N65M5 17 A 125 W STW21N65M5 1. Limited only by maximum temperature allowed ■ Worldwide best RDS(on) * area ■ Higher |
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STMicroelectronics |
N-CHANNEL MOSFET Order codes VDSS RDS(on)max ID PW STB21N90K5 250 W STF21N90K5 900 V STP21N90K5 STW21N90K5 40 W < 0.299 Ω 18.5 A 250 W ■ TO-220 worldwide best RDS(on) ■ Worldwide best FOM (figure of merit) ■ Ultra low gate charge ■ 100% avalanche tested ■ Zene |
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STMicroelectronics |
N-CHANNEL MOSFET Order codes VDSS RDS(on)max ID PW STB21N90K5 250 W STF21N90K5 900 V STP21N90K5 STW21N90K5 40 W < 0.299 Ω 18.5 A 250 W ■ TO-220 worldwide best RDS(on) ■ Worldwide best FOM (figure of merit) ■ Ultra low gate charge ■ 100% avalanche tested ■ Zene |
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STMicroelectronics |
N-CHANNEL MOSFET TYPE STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N ■ ■ Figure 1: Package RDS(on) < < < < < 0.19 0.19 0.19 0.19 0.19 Ω Ω Ω Ω Ω ID 18 A 18 A 18 A (*) 18 A 18 A VDSS (@Tjmax) 550 550 550 550 550 V V V V V 3 1 3 1 2 3 1 2 D2PAK TO-220 T |
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STMicroelectronics |
N-CHANNEL MOSFET TYPE STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N ■ ■ Figure 1: Package RDS(on) < < < < < 0.19 0.19 0.19 0.19 0.19 Ω Ω Ω Ω Ω ID 18 A 18 A 18 A (*) 18 A 18 A VDSS (@Tjmax) 550 550 550 550 550 V V V V V 3 1 3 1 2 3 1 2 D2PAK TO-220 T |
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