STP21NM60N |
Part Number | STP21NM60N |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | ucThis series of devices implements the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to teyield one of... |
Features |
Type
VDSS (@Tjmax)
RDS(on) max
ID
STB21NM60N
)STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N
650 V 650 V 650 V 650 V 650 V
< 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω
17 A 17 A 17 A(1) 17 A 17 A
rod1. Limited by maximum temperature allowed
P ■ 100% avalanche tested te ■ Low input capacitance and gate charge le ■ Low gate input resistance bsoApplication - O ■ Switching applications t(s)Description ucThis series of devices implements the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to t... |
Document |
STP21NM60N Data Sheet
PDF 498.94KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP21NM60ND |
INCHANGE |
N-Channel MOSFET | |
2 | STP21NM60ND |
STMicroelectronics |
N-channel MOSFET | |
3 | STP21NM50N |
STMicroelectronics |
N-CHANNEL MOSFET | |
4 | STP21N05L |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | |
5 | STP21N05LFI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |