F21NM50N |
Part Number | F21NM50N |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | - OThe devices are realized with the second )generation of MDmesh Technology. This t(srevolutionary Power MOSFET associates a new cvertical structure to the company's strip layout to uyield one of the... |
Features |
Type
VDSS (@Tjmax)
RDS(on)
ID
STB21NM50N
)STB21NM50N-1 t(sSTF21NM50N cSTP21NM50N uSTW21NM50N
550V 550V 550V 550V 550V
< 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω
18A 18A 18A(1) 18A 18A
rod1. Limited by wire bonding
P ■ 100% avalanche tested te ■ Low input capacitance and gate charge le ■ Low gate input resistance bsoDescription - OThe devices are realized with the second )generation of MDmesh Technology. This t(srevolutionary Power MOSFET associates a new cvertical structure to the company's strip layout to uyield one of the world's lowest on-resistance and dgate charge. It is therefore su... |
Document |
F21NM50N Data Sheet
PDF 448.99KB |
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