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ST Microelectronics |
STP55NF06 Order code STB55NF06 STP55NF06 STP55NF06FP VDSS RDS(on) max. ID 60 V < 0.018 Ω 50 A 50 A (1) 1. Refer to soa for the max allowable current value on FP-type due to Rth value ■ 100% avalanche tested ■ Exceptional dv/dt capability Applications |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% * • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss App |
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Interinar |
2-Phase Step Motor |
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STMicroelectronics |
N-channel MOSFET TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% Order code STP15810 VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W • 100% avalanche tested • Ultra low on-resistance Applications • Switching applications Description This N-cha |
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ST Microelectronics |
STP9NK70ZFP OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
STP9NK65ZFP OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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ST Microelectronics |
STP4NK60ZFP TAB 3 2 1 TO-220 3 2 1 TO-220FP Order codes VDS RDS(on) max. PTOT STP4NK60Z 600 V 2 Ω 70 W STP4NK60ZFP • 100% avalanche tested • Very low intrinsic capacitances • Zener-protected ID 4A Figure 1. Internal schematic diagram D(2, TAB) G(1) Applic |
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STMicroelectronics |
STP65NF06 www.DataSheet4U.com Type VDSS 60V 60V RDS(on) <14mΩ <14mΩ ID 60A 60A 3 1 1 2 3 STD65NF06 STP65NF06 ■ ■ Standard level gate drive 100% avalanche tested DPAK TO-220 Description This Power MOSFET is the latest development of STMicroelectronics u |
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ST Microelectronics |
STP45N10 |
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ST Microelectronics |
STP1806 Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH |
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STMicroelectronics |
POWER SCHOTTKY RECTIFIER AND BENEFITS ■ ■ ■ ■ 2 x 10 A 100 V 175°C 0.71 V A1 K A2 High junction temperature capability for converters located in confined enrironment Low leakage current at high temperature Low static and dynamic losses as a result of the Schottky barrier |
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STMicroelectronics |
Power Schottky Rectifier Very small conduction losses Negligible switching losses Extreme fast switching Low thermal resistance Avalanche capability specified STPS6045C Power Schottky Rectifier Datasheet - production data Description Dual center tap Schottky rec |
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ST Microelectronics |
STP6NC60 te Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand |
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ST Microelectronics |
(STA014x) MPEG 2.5 LAYER III AUDIO DECODER WITH ADPCM AND SRS WOWO POSTPROCESSING CAPABILITY specified for Layer III in ISO/IEC 11172-3 (MPEG 1 Audio) - All features specified for Layer III in ISO/IEC 13818-3.2 (MPEG 2 Audio) - Lower sampling frequencies syntax extension, (not specified by ISO) called MPEG 2.5 DECODES LAYER III STEREO CHANNE |
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STMicroelectronics |
High voltage power Schottky rectifier High junction temperature capability Good trade-off between leakage current and forward voltage drop Low leakage current Low thermal resistance Avalanche capability specified High frequency operation ECOPACK®2 compliant component Descr |
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ST Microelectronics |
STP60N06 |
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STMicroelectronics |
ULTRA-FAST RECOVERY RECTIFIER DIODES s D PAK STPR1620CG 2 s s s SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY DESCRIPTION Low cost dual center tap rectifier suited for Switched Mode Power Supplies and high frequency DC to DC conve |
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ST Microelectronics |
N-CHANNEL Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
STP7NC70ZF OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
STP140NF55 www.DataSheet4U.com Type VDSS 55V 55V 55V RDS(on) <0.008Ω <0.008Ω <0.008Ω ID (1) 80A 80A 80A 3 1 2 STB140NF55 STB140NF55-1 STP140NF55 1. Current limited by package 3 1 3 12 Description This Power MOSFET is the latest development of STMicroel |
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