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P1806 |
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| Part Number | P1806 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, ... |
| Features |
ain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 60 60 ± 20 50 35 200 110 0.73 7 350 -55 to 175
(2) Starting T j = 25 oC, ID = 25A, VDD = 30V
(1) ISD 50A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX
Unit V V V A A A W W/°C V/ns mJ °C
() Pulse width limited by safe operating area. November 2004
Rev.0.1
1/9
STP1806
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Juncti... |
| Document |
 P1806 Data Sheet
PDF 246.82KB |
| Distributor | Stock | Price | Buy |
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