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STMicroelectronics |
STP16NE06 Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes STD16NF25 STF16NF25 STP16NF25 VDS 250 V RDS(on) max 0.235 Ω ID PTOT 14 A 100 W 14 A(1) 25 W 14 A 100 W 1. Limited by maximum junction temperature • Exceptional dv/dt capability • 100% avalanche tested • Application oriented characte |
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STMicroelectronics |
Ultra low power 16-Mbit serial SPI page EEPROM Interface • Supports serial peripheral interface (SPI) and dual/quad outputs • Wide voltage range: VCC from 1.6 to 3.6 V • Temperature range: – -40 °C to +85 °C (industrial) – -40 °C to +105 °C (extended) • Fast read: – 50 MHz read single output – 80 |
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ST Microelectronics |
N-CHANNEL MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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ST Microelectronics |
STP16NF06 Type STP16NF06 STP16NF06FP VDSS 60V 60V RDS(on) <0.1Ω <0.1Ω ID 16A 11A ■ Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization Description This Power MOSFET is the latest development of STMicroelectroni |
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STMicroelectronics |
STP16NE06FP Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable |
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STMicroelectronics |
LNBP supply and control voltage regulator summary ■ Complete interface for two LNBs remote supply and control ■ LNB selection and stand-by function ■ Built-in tone oscillator factory trimmed at 22KHz ■ Fast oscillator start-up facilitates DiSEqCTM encoding ■ Two supply inputs for lowest diss |
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STMicroelectronics |
16-Mbit Low Voltage Serial Flash Memory SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 16Mbit of Flash Memory Page Program (up to 256 Bytes) in 1.4ms (typical) Sector Erase (512 Kbit) Bulk Erase (16Mbit) 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 50MHz Clock Rate (maximum) Deep |
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ST Microelectronics |
N-CHANNEL Power MOSFET will provide an improved performance of the application when the clock signal is skewed because the daisy chain is too long. Table 1: Order Codes Part Number STP16C596B1R STP16C596M STP16C596MTR STP16C596TTR STP16C596XTTR Package TSSOP24 TSSOP24 (e |
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STMicroelectronics |
STP16NF06FP Type STP16NF06 STP16NF06FP VDSS 60V 60V RDS(on) <0.1Ω <0.1Ω ID 16A 11A ■ Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization Description This Power MOSFET is the latest development of STMicroelectroni |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS RDS(on) max ID PTOT STP160N4LF6 40 V 0.0029 Ω 120 A 150 W • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • Logic level drive • High avalanche ruggedness • 100% avalanche tested Figure 1. Internal schematic dia |
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STMicroelectronics |
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY e output which deliver a current proportional to the selected output current. SenseEnable pin allows to connect any number of VNQ05XSP16 on the same Current Sense line. Active current limitation combined with thermal shut-down and automatic restart p |
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ST Microelectronics |
N-CHANNEL Power MOSFET Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable |
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ST Microelectronics |
N-CHANNEL 650V-0.38OHM-13A TO-220 I2SPAK Zener - Protected SuperMESH MOSFET TYPE STP16NK65Z STB16NK65Z-S s s s s s s Figure 1: Package ID 13 A 13 A Pw 190 W 190 W VDSS 650 V 650 V RDS(on) < 0.50 Ω < 0.50 Ω TYPICAL RDS(on) = 0.38Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINS |
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ST Microelectronics |
N-CHANNEL Power MOSFET Type STP16NF06 STP16NF06FP VDSS 60V 60V RDS(on) <0.1Ω <0.1Ω ID 16A 11A ■ Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization Description This Power MOSFET is the latest development of STMicroelectroni |
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ST Microelectronics |
N-CHANNEL Power MOSFET Type STP16NF06 STP16NF06FP VDSS 60V 60V RDS(on) <0.1Ω <0.1Ω ID 16A 11A ■ Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization Description This Power MOSFET is the latest development of STMicroelectroni |
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ST Microelectronics |
Low voltage 16-Bit constant current LED sink driver ■ ■ ■ ■ ■ Low voltage power supply down to 3V 16 constant current output channels Adjustable output current through external resistor Serial Data IN/Parallel Data OUT Auto power-saving feature minimizes the quiescent current if no active data is det |
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ST Microelectronics |
Low voltage 16-Bit constant current LED sink driver • Low voltage power supply down to 3 V • 16 constant current output channels • Adjustable output current through external resistor • Serial data IN/parallel data OUT • Can be driven by a 3.3 V microcontroller • Output current: 5 to 100 mA • Max clock |
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STMicroelectronics |
STP16NS25 oltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Volt |
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STMicroelectronics |
Low voltage 16-bit constant current LED sink driver ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low voltage power supply down to 3 V 16 constant current output channels Adjustable output current through external resistor Short and open output error detection Serial data IN/parallel data OUT 3.3 V MCU-driving capability Outp |
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