| No. | Partie # | Fabricant | Description | Fiche Technique |
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ST Microelectronics |
IGBT SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) D 2PAK I2PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced famil |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very |
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ST Microelectronics |
N-CHANNEL PowerMESH TM IGBT D 2PAK I2PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener |
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ST Microelectronics |
N-CHANNEL PowerMESH TM IGBT D 2PAK I2PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener |
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STMicroelectronics |
very fast IGBT ■ ■ ■ High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability 1 2 3 1 2 3 Applications ■ ■ ■ TO-247 3 1 TO-220 High frequency inverters UPS, motor drivers HF, SMPS and PFC in bot |
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STMicroelectronics |
IGBT Prod t(s) DESCRIPTION lete uc Using the latest high voltage technology based on a d patented strip layout, STMicroelectronics has so ro designed an advanced family of IGBTs, the b P PowerMESH™ IGBTs, with outstanding performances. The built in collec |
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STMicroelectronics |
very fast IGBT • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capability Applications • High frequency inverters • UPS, motor drivers • HF, SMPS and PFC in both hard switch and resonant topologi |
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STMicroelectronics |
Automotive-grade 360V internally clamped IGBT • AEC-Q101 qualified • SCIS energy of 300 mJ @ TJ = 25 °C • Parts are 100% tested in SCIS • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Very low saturation voltage • High pulsed current capability • G |
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STMicroelectronics |
Automotive-grade 400V internally clamped IGBT • AEC-Q101 qualified • SCIS energy of 320 mJ @ TJ = 25 °C • Parts are 100% tested in SCIS • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Very low saturation voltage • High pulsed current capability • G |
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STMicroelectronics |
Automotive-grade 450V internally clamped IGBT • AEC-Q101 qualified • SCIS energy of 300 mJ @ TJ = 25 °C • Parts are 100% tested in SCIS • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Very low saturation voltage • High pulsed current capability • G |
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ST Microelectronics |
N-CHANNEL IGBT SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”) 3 1 DESCRIPTION Using the latest high voltage technology based on patented strip layout, STMicroelectronics has designed an advanced family of IGBTs w |
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STMicroelectronics |
600V 20A very high speed trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 2 1 1 3 • Tail-less switching off • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resis |
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STMicroelectronics |
very fast IGBT ■ ■ ■ High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability 1 2 3 1 2 3 Applications ■ ■ ■ TO-247 3 1 TO-220 High frequency inverters UPS, motor drivers HF, SMPS and PFC in bot |
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STMicroelectronics |
600V 20A high speed trench gate field-stop IGBT • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS, PFC Figure 1. Internal schematic diagram Descr |
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STMicroelectronics |
Automotive-grade 390V internally clamped IGBT • Designed for automotive applications and AEC-Q101 qualified • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed current capability • Gate and gate-emitter resistor Fi |
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