STGB20V60DF |
Part Number | STGB20V60DF |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduc... |
Features |
• Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 2 1 1 3 • Tail-less switching off • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resistance 3 TO-220 TAB D²PAK 3 2 1 1 2 • Very fast soft recovery antiparallel diode • Lead free package TO-247 TO-3P Figure 1. Internal schematic diagram Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description This device is an IGBT developed using an... |
Document |
STGB20V60DF Data Sheet
PDF 2.07MB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STGB20H60DF |
STMicroelectronics |
600V 20A high speed trench gate field-stop IGBT | |
2 | STGB20N40LZ |
STMicroelectronics |
Automotive-grade 390V internally clamped IGBT | |
3 | STGB20N45LZAG |
STMicroelectronics |
Automotive-grade 450V internally clamped IGBT | |
4 | STGB20NB32LZ |
ST Microelectronics |
IGBT | |
5 | STGB20NB32LZ-1 |
STMicroelectronics |
IGBT |