Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
GB20NB32LZ |
Click to view a larger image
| Part Number | GB20NB32LZ |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built i... |
| Features |
TINGS
Symbol VCES VECR VGE IC IC ICM ( ) Eas Ptot ESD Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at Tc = 25°C Collector Current (continuous) at Tc = 100°C Collector Current (pulsed) Single Pulse Energy Tc = 25°C Total Dissipation at Tc = 25°C Derating Factor ESD (Human Body Model) Storage Temperature Max. Operating Junction Temperature Value CLAMPED 20 CLAMPED 40 30 80 700 150 1 4 –65 to 175 175 Unit V V V A A A mJ W W/°C KV °C °C ( •)Pulse width limited by safe operating area THERMAL DATA Rthj-case Rth... |
| Document |
 GB20NB32LZ Data Sheet
PDF 406.99KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GB20NB32LZ-1 |
ST Microelectronics |
N-CHANNEL PowerMESH TM IGBT |
|
| 2 | GB20NC60V |
STMicroelectronics |
very fast IGBT |
|
| 3 | GB200 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|
| 4 | GB200A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|
| 5 | GB200TS60NPBF |
Vishay Siliconix |
Ultrafast Speed IGBT |
|