Renesas Technology HAT fiche technique

No.	Partie #	Fabricant	Description
1	HAT1097R	Renesas Technology	Silicon P-Channel Power MOSFET • Low on-resistance • Capable of 4.5 V gate drive www.DataSheet4U.com • High density mounting • “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline RENESAS Package code: PRSP0008DD-A (Previous code: SOP-
2	HAT1097RJ	Renesas Technology	Silicon P-Channel Power MOSFET • Low on-resistance • Capable of 4.5 V gate drive www.DataSheet4U.com • High density mounting • “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline RENESAS Package code: PRSP0008DD-A (Previous code: SOP-
3	HAT1055RJ	Renesas Technology	Silicon P-Channel Power MOSFET • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4
4	HAT1111C	Renesas Technology	Silicon P-Channel Power MOSFET • Low on-resistance RDS(on) = 245 mΩ typ. (at VGS = –10 V) www.DataSheet4U.com • Low drive current. • 4.5 V gate drive devices. • High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 S 1 2
5	HAT2266H	Renesas Technology	Silicon N-Channel Power MOSFET • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 9.2 mΩ typ. (at VGS = 10 V) • Lead Free Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 D 5 1 234 4
6	HAT1047R	Renesas Technology	Silicon P-Channel Power MOSFET • • • • For Automotive Application (at Type Code "J") Low on-resistance Capable of –4.5 V gate drive High density mounting Outline SOP-8 5 DataSheet4U.com 7 6 8 DataShee 5 6 7 8 D D D D 3 1 2 4 4 G S S S 1 2 3 1, 2, 3 4 5, 6, 7, 8 Source Gat
7	HAT1065T	Renesas Technology	Silicon P-Channel Power MOSFET • Low on-resistance • Capable of –4 V gate drive • High density mounting Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 ) 87 6 5 123 4 REJ03G0161-0200 Rev.2.00 Aug 06, 2007 1 8 D D 4 5 G G S3 MOS1 S6 MOS2 1,
8	HAT2187WP	Renesas Technology	Silicon N-Channel MOSFET • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 4 32 1 G 5 678 D DDD REJ03G0535-0500 Rev.5.00 Sep.02,2005 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1
9	HAT1041T	Renesas Technology	Silicon P-Channel Power MOSFET www.DataSheet4U.com • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline TSSOP-8 65 34 87 12 1 5 8 D D D 4 G S S S S 2 3 6 7 1, 5, 8 Drain 2, 3, 6, 7 Source 4 Gate HAT1041T Absolute Maximum Rat
10	HAT1065R	Renesas Technology	Silicon P-Channel Power MOSFET • Low on-resistance • Capable of –4 V gate drive • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8 7 65 2 G 1 234 78 DD 4 G S1 MOS1 56 DD S3 MOS2 REJ03G0579-0200 Rev.2.00 Apr 04, 2006 1, 3 So
11	HAT1091C	Renesas Technology	Silicon P-Channel Power MOSFET • Low on-resistance RDS(on) = 134 mΩ typ. (at VGS = –4.5 V) www.DataSheet4U.com • Low drive current. • 2.5 V gate drive devices. • High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5
12	HAT1110R	Renesas Technology	Silicon P-Channel Power MOSFET • Capable of –4.5 V gate drive • Low drive current • High density mounting Outline SOP-8 78 56 DD DD 2 4 G G S1 MOS1 S3 MOS2 8 7 65 1 234 REJ03G0416-0200 Rev.2.00 Oct.07.2004 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum
13	HAT1126R	Renesas Technology	Silicon P-Channel Power MOSFET • Low on-resistance • Capable of 4.5 V gate drive www.DataSheet4U.com • High density mounting • “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 7 8 D D 5 6 D D 5 7 6 2 G 4 G 8 3 1 2 S1 S3
14	HAT1126RJ	Renesas Technology	Silicon P-Channel Power MOSFET • Low on-resistance • Capable of 4.5 V gate drive www.DataSheet4U.com • High density mounting • “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 7 8 D D 5 6 D D 5 7 6 2 G 4 G 8 3 1 2 S1 S3
15	HAT1139H	Renesas Technology	Silicon P-Channel Power MOSFET • Capable of –4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 7.0 mΩ typ. (at VGS = –10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 5 5 D D 1 234 2 3 G G S S 1 4 REJ
16	HAT2085R	Renesas Technology	Silicon N-Channel Power MOSFET • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1234 5678 DDDD SSS 123 REJ03G1181-0200 (Previous: ADE-208-1232) Rev.2.00 Sep 07, 2005 1, 2, 3
17	HAT2221C	Renesas Technology	Silicon N-Channel Power MOSFET • Low on-resistance RDS(on) = 120 mΩ typ. (at VGS = 10 V) • Low drive current. • High density mounting • 4.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1240-0400 Rev.4.0
18	HAT2282C	Renesas Technology	Silicon N-Channel Power MOSFET • Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1329-0100 Rev.1.00 J
19	HAT2198R	Renesas Technology	Silicon N-Channel Power MOSFET • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 7.2 mΩ typ. (at VGS = 10 V) Outline SOP-8 5 678 D DDD 4 G SS S 12 3 8 7 65 1 234 REJ03G0062-020 Rev.2.0 6HS.8.20
20	HAT2171H	Renesas Technology	Silicon N-Channel MOSFET • High speed switching • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 3.8 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 RE