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HAT1041T |
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| Part Number | HAT1041T |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric ... |
| Features |
www.DataSheet4U.com • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline TSSOP-8 65 34 87 12 1 5 8 D D D 4 G S S S S 2 3 6 7 1, 5, 8 Drain 2, 3, 6, 7 Source 4 Gate HAT1041T Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings -20 ±12 -6.0 -48 -6.0 1.3 150 –55 to +150... |
| Document |
 HAT1041T Data Sheet
PDF 186.11KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HAT1043M |
Hitachi Semiconductor |
Silicon P-Channel Power MOSFET |
|
| 2 | HAT1043M |
Renesas |
Silicon P-Channel Power MOSFET |
|
| 3 | HAT1044M |
Hitachi Semiconductor |
Silicon P-Channel Power MOSFET |
|
| 4 | HAT1044M |
Renesas |
Silicon P-Channel Power MOSFET |
|
| 5 | HAT1047R |
Renesas Technology |
Silicon P-Channel Power MOSFET |
|