HAT1139H |
Part Number | HAT1139H |
Manufacturer | Renesas (https://www.renesas.com/) Technology |
Description | HAT1139H Silicon P Channel Power MOS FET Power Switching Features • Capable of –4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 7.0 mΩ typ. (at VGS = –10 V)... |
Features |
• Capable of –4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 7.0 mΩ typ. (at VGS = –10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 5 5 D D 1 234 2 3 G G S S 1 4 REJ03G1244-0200 Rev.2.00 Jun.22.2005 1, 4 Source 2, 3 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 1 Drive operati... |
Document |
HAT1139H Data Sheet
PDF 88.85KB |
Distributor | Stock | Price | Buy |
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1 | HAT1108C |
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2 | HAT1110R |
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3 | HAT1111C |
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4 | HAT1126R |
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5 | HAT1126RJ |
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