HAT1139H Renesas Technology Silicon P-Channel Power MOSFET Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

HAT1139H

Renesas Technology
HAT1139H
HAT1139H HAT1139H
zoom Click to view a larger image
Part Number HAT1139H
Manufacturer Renesas (https://www.renesas.com/) Technology
Description HAT1139H Silicon P Channel Power MOS FET Power Switching Features • Capable of –4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 7.0 mΩ typ. (at VGS = –10 V)...
Features
• Capable of
  –4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS(on) = 7.0 mΩ typ. (at VGS =
  –10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 5 5 D D 1 234 2 3 G G S S 1 4 REJ03G1244-0200 Rev.2.00 Jun.22.2005 1, 4 Source 2, 3 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 1 Drive operati...

Document Datasheet HAT1139H Data Sheet
PDF 88.85KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 HAT1108C
Renesas Technology
Silicon P-Channel Power MOSFET Datasheet
2 HAT1110R
Renesas Technology
Silicon P-Channel Power MOSFET Datasheet
3 HAT1111C
Renesas Technology
Silicon P-Channel Power MOSFET Datasheet
4 HAT1126R
Renesas Technology
Silicon P-Channel Power MOSFET Datasheet
5 HAT1126RJ
Renesas Technology
Silicon P-Channel Power MOSFET Datasheet
More datasheet from Renesas Technology



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact