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Renesas |
Quad Operational Amplifier • • • • Wide range of supply voltage, and single power supply used Internal phase compensation Wide range of common mode voltage, and possible to operate with an input about 0 V Low electro-magnetic susceptibility level Measurement Condition Rf Vcc = |
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Hybrid Power Boost (HPB) and Narrow VDC (NVDC) Combo Battery Charger including a PROCHOT# indicator for system low voltage, adapter overcurrent, battery overcurrent, or overheating, with an array of SMBus programmable parameters for maximum flexibility. It also features a hardware-based adapter-current limit and batt |
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Renesas |
Silicon N-Channel IGBT Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENESAS Package code: P |
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Renesas |
N-Channel Power MOSFET • Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL Outline RENESAS Package code: PRSS0003AF-A) |
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Renesas |
N-Channel IGBT Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENESAS Package code: |
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Renesas Technology |
Silicon N-Channel MOSFET • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier Outline RENESAS Package code: PRS |
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Renesas |
Silicon N-Channel MOSFET • High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 G |
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Renesas |
Silicon N-Channel MOSFET • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline REJ03G1004-0200 (Previous: ADE-208-1352) Rev |
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Renesas |
N-Channel IGBT • Trench gate and thin wafer technology (G6H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 100 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL Outline RENESAS Package co |
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Renesas |
USB3.0 to SATA3 BRIDGE CONTROLLER User Hardware Manual |
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Renesas |
Silicon N-Channel MOSFET • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching Outline REJ03G1056-0401 (Previous: ADE-208-566B) Rev.4.01 Apr 27, 2006 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C •FM) D G 1. Gate 2. Drain 3. S |
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Renesas |
Quad 125MHz Video CurrentFeedback Amplifier wide bandwidth and high slew rate, and is optimized for video applications and gains between 1 and 10. It is a current feedback amplifier and thus yields less bandwidth degradation at high closed loop gains than voltage feedback amplifiers. The low d |
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Renesas Technology |
Dual Operational Amplifier Wide range of supply voltage Single supply: 3 V to 36 V, Dual supplies: 1.5 V to ±18 V Wide range of common mode voltage, and possible to operate with an input about 0 V, and output around 0 V is available. Internally frequency compensated for |
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Renesas |
LOW PHASE NOISE CLOCK MULTIPLIER • Packaged in 16-pin SOIC or TSSOP • Pb (lead) free package • Uses fundamental 10 - 27 MHz crystal or clock • Patented PLL with the lowest phase noise • Output clocks up to 156 MHz at 3.3 V • Low phase noise: -132 dBc/Hz at 10 kHz • Low jitter - 18 p |
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Renesas |
Silicon N Channel Power MOS FET • Low on-resistance RDS(on) = 7.9mΩ typ.(at VGS = 10V) • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline Rev.1.00 September.26.2007 Note: This product is designed for Ele |
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Renesas |
Four Channel Power MOSFET Drivers • Excellent response times • Matched rise and fall times • Reduced clock skew • Low output impedance • Low input capacitance • High noise immunity • Improved clocking rate • Low supply current • Wide operating voltage range • Pb-free available Applic |
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Renesas |
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH • 32 serial input and output streams • 1,024 x 1,024 channel non-blocking switching at 2.048 Mb/s • Per-channel Variable Delay Mode for low-latency applications • Per-channel Constant Delay Mode for frame integrity applications • Automatic identific |
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Renesas |
N-Channel IGBT Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated package TO-220FL R07DS |
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Renesas |
16-Bit Single-Chip Microcontrollers Ultra-low power consumption technology VDD = single power supply voltage of 1.6 to 5.5 V HALT mode STOP mode SNOOZE mode RL78 CPU core CISC architecture with 3-stage pipeline Minimum instruction execution time: Can be changed from high s |
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Renesas |
Charging System Safety Circuit |
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