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RJP30E2 |
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| Part Number | RJP30E2 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching... |
| Features |
• Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) Preliminary Datasheet R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 C 1 23 1. Gate 2. Collector G 3. Emitter E Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage tem... |
| Document |
 RJP30E2 Data Sheet
PDF 213.25KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RJP30E2DPK-M0 |
Renesas |
N-Channel Power MOSFET |
|
| 2 | RJP30E2DPP-M0 |
Renesas |
N-Channel Power MOSFET |
|
| 3 | RJP30E3DPK-M0 |
Renesas |
N-Channel Power MOSFET |
|
| 4 | RJP30E3DPP-M0 |
Renesas |
N-Channel Power MOSFET |
|
| 5 | RJP3053DPP |
Renesas Technology |
IGBT |
|