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RJP63K2DPP-M0 |
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| Part Number | RJP63K2DPP-M0 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
| Features |
Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated package TO-220FL R07DS0468EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E www.DataSheet.co.kr Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case t... |
| Document |
 RJP63K2DPP-M0 Data Sheet
PDF 205.86KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RJP63K2DPK-M0 |
Renesas |
N-Channel IGBT |
|
| 2 | RJP63F3 |
Renesas |
N-Channel IGBT |
|
| 3 | RJP63F3A |
Renesas |
N-Channel IGBT |
|
| 4 | RJP63F3DPP-M0 |
Renesas |
N-Channel IGBT |
|
| 5 | RJP6065DPM |
Renesas |
N-Channel IGBT |
|