| No. | Partie # | Fabricant | Description | Fiche Technique |
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General Semiconductor |
Bandswitching Diodes ♦ Silicon Epitaxial Planar Diode Switches .012 (0.3) ♦ For electronic bandswitching in radio and .106 (2.7) .091 (2.3) .079 (2.0) .063 (1.6) Cathode Mark Top View max. .049 (1.25) max. .006 (0.15) .059 (1.5) .043 (1.1) max. .004 (0.1) TV tun |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners) 2.9 pF CT1/CT28 13.5 ∆CT/CT – 2.5 – – % Ω – – – nH – rS LS Semiconductor Group 2 BB 639 Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 |
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ON Semiconductor |
P-Channel Enhancement Mode Field Effect Transistor • −0.12 A, −60 V ♦ RDS(on) = 10 W @ VGS = −10 V ♦ RDS(on) = 20 W @ VGS = −4.5 V • Voltage Controlled P−Channel Small Signal Switch • High Density Cell design for Low RDS(on) • High Saturation Current ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwi |
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General Semiconductor |
Bandswitching Diodes ♦ Silicon Epitaxial Planar Diode Switches ♦ For electronic bandswitching in radio and TV tuners in the frequency range of 50 … 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The |
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General Semiconductor |
Bandswitching Diodes ♦ Silicon Epitaxial Planar Diode Switches .012 (0.3) ♦ For electronic bandswitching in radio and .106 (2.7) .091 (2.3) .079 (2.0) .063 (1.6) Cathode Mark Top View max. .049 (1.25) max. .006 (0.15) .059 (1.5) .043 (1.1) max. .004 (0.1) TV tun |
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ON Semiconductor |
Hallogic Hall Effect Sendsors Type OH360U |
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ON Semiconductor |
Silicon Carbide Schottky Diode • Max Junction Temperature 175°C • Avalanche Rated 506 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery • These Devices are Halogen Free/BFR Free and are RoHS Compli |
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ON Semiconductor |
N-Channel MOSFET These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are p |
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ON Semiconductor |
SiC Schottky Diode Max Junction Temperature 175C Avalanche Rated 156 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery These Devices are Halogen Free/BFR Free and are RoHS Compli |
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ON Semiconductor |
Silicon Carbide Schottky Diode Max Junction Temperature 175C Avalanche Rated 166 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery This Device is Halide Free and RoHS Compliant with Exemptio |
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IK Semiconductor |
Tone/Pulse Dialer with Handsfree control and Flash Function g mode, 20 Hz, М/В = 1/2 Oscillator input Oscillator output Ground Supply output Tone dialing output Dialing transmission mute output Mode output pin Key-in tone output Dialing pulse output Keyboard column input Keyboard column input Keyboard column |
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TelCom Semiconductor |
(TC5xx) PRECISION ANALOG FRONT ENDS s s s s s s s s s Precision (up to 17 Bits) A/D Converter "Front End" 3-Pin Control Interface to Microprocessor Flexible: User Can Trade-Off Conversion Speed for Resolution Single Supply Operation (TC510/514) 4 Input, Differential Analog MUX (TC514) |
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TelCom Semiconductor |
(TC5xx) PRECISION ANALOG FRONT ENDS s s s s s s s s s Precision (up to 17 Bits) A/D Converter "Front End" 3-Pin Control Interface to Microprocessor Flexible: User Can Trade-Off Conversion Speed for Resolution Single Supply Operation (TC510/514) 4 Input, Differential Analog MUX (TC514) |
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TelCom Semiconductor |
(TC5xx) PRECISION ANALOG FRONT ENDS s s s s s s s s s Precision (up to 17 Bits) A/D Converter "Front End" 3-Pin Control Interface to Microprocessor Flexible: User Can Trade-Off Conversion Speed for Resolution Single Supply Operation (TC510/514) 4 Input, Differential Analog MUX (TC514) |
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ON Semiconductor |
Single P-Channel Enhancement Mode Field Effect Transistor These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance and provide s |
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ON Semiconductor |
N-Channel Logic Level Enhancement Mode Field Effect Transistor SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resi |
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ON Semiconductor |
60V Dual P-Channel MOSFET • –2.3 A, –60 V RDS(ON) = 250 mΩ @ VGS = –10 V RDS(ON) = 500 mΩ @ VGS = –4.5 V • Low gate charge (9nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD |
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ON Semiconductor |
Silicon Carbide Schottky Diode Max Junction Temperature 175C Avalanche Rated 380 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery These Devices are Halogen Free/BFR Free and are RoHS Compli |
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ON Semiconductor |
SiC Schottky Diode • Max Junction Temperature 175°C • Avalanche Rated 110 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery • This Device is Halide Free and RoHS Compliant with Exemptio |
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General Semiconductor |
Bandswitching Diodes ♦ Silicon Epitaxial Planar Diode Switches ♦ For electronic bandswitching in radio and TV tuners in the frequency range of 50 … 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The |
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