NDS0610 ON Semiconductor P-Channel Enhancement Mode Field Effect Transistor Datasheet, en stock, prix

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NDS0610

ON Semiconductor
NDS0610
NDS0610 NDS0610
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Part Number NDS0610
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description This P−Channel Enhancement Mode Field Effect Transistors are Produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on−st...
Features
• −0.12 A, −60 V ♦ RDS(on) = 10 W @ VGS = −10 V ♦ RDS(on) = 20 W @ VGS = −4.5 V
• Voltage Controlled P−Channel Small Signal Switch
• High Density Cell design for Low RDS(on)
• High Saturation Current ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS VGSS ID Drain−to−Source Voltage Gate−to−Source Voltage Drain Current − Continuous (Note 1) − Pulsed −60 V ±20 V A −0.12 −1 PD Maximum Power Dissipation (Note 1) 0.36 W Derate Above 25°C 2.9 TJ, Tstg Operating and Storage Junction Temperature Range −55 to +150 °C TL Maximum Lead Tempe...

Document Datasheet NDS0610 Data Sheet
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