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NDS9948 |
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| Part Number | NDS9948 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ... |
| Features |
• –2.3 A, –60 V RDS(ON) = 250 mΩ @ VGS = –10 V RDS(ON) = 500 mΩ @ VGS = –4.5 V • Low gate charge (9nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD1 DD1 DD2 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) TJ, TSTG (Note 1c) Operati... |
| Document |
 NDS9948 Data Sheet
PDF 207.35KB |
| Distributor | Stock | Price | Buy |
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