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NDS355AN |
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| Part Number | NDS355AN |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Features SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high dens... |
| Features |
SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low inline power loss are needed in a very small outline surface mount package.
1.7A, 30 V, RDS(ON) = 0.125 Ω @ VGS = 4.5 V RDS(ON) = 0.085 Ω @ VGS = 10 V.
Ind... |
| Document |
 NDS355AN Data Sheet
PDF 464.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDS355AN |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | NDS355N |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | NDS351AN |
Fairchild |
N-Channel MOSFET |
|
| 4 | NDS351AN |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | NDS351N |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|