| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
Digital FET/ P-Channel -25 V, -0.12 A continuous, -0.5 A Peak. RDS(ON) = 13 Ω @ VGS= -2.7 V RDS(ON) = 10 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body |
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Fairchild Semiconductor |
N-Channel Digital FET 25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.45 Ω @ VGS = 4.5 V RDS(ON) = 0.6 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1V. Gate-Source Zener for ESD ruggedness.>6kV Human Body Model |
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ON Semiconductor |
N-Channel Digital FET • 25 V, 0.22 A Continuous, 0.5 A Peak ♦ RDS(on) = 5 W @ VGS = 2.7 V ♦ RDS(on) = 4 W @ VGS = 4.5 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V • Gate−Source Zener for ESD Ruggedness. > 6 kV Huma |
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Fairchild Semiconductor |
N-Channel Digital FET 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 Ω @ VGS= 2.7 V RDS(ON) = 4 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.06V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model |
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Fairchild Semiconductor |
Digital FET/ P-Channel -25 V, -0.46 A continuous, -1.5 A Peak. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Bo |
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Fairchild Semiconductor |
20V N-Channel MOSFET • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) Applications • • • Load switch Battery protection Power management D |
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ON Semiconductor |
N-Channel Digital FET • 25 V, 0.22 A Continuous, 0.5 A Peak ♦ RDS(on) = 5 W @ VGS = 2.7 V ♦ RDS(on) = 4 W @ VGS = 4.5 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V • Gate−Source Zener for ESD Ruggedness. > 6 kV Huma |
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ON Semiconductor |
P-Channel Digital FET |
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ON Semiconductor |
N-Channel Digital FET • 25 V, 0.68 A Continuous, 2 A Peak ♦ RDS(ON) = 0.45 Ω @ VGS = 4.5 V ♦ RDS(ON) = 0.6 Ω @ VGS= 2.7 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1 V • Gate−Source Zener for ESD Ruggedness, > 6 kV Human |
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ON Semiconductor |
P-Channel Digital FET • −25 V, −0.46 A Continuous, −1.5 A Peak ♦ RDS(on) = 1.1 W @ VGS = −4.5 V ♦ RDS(on) = 1.5 W @ VGS = −2.7 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V • Gate−Source Zener for ESD Ruggedness. > 6 |
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ON Semiconductor |
P-Channel Digital FET • −25 V, −0.46 A Continuous, −1.5 A Peak ♦ RDS(on) = 1.1 W @ VGS = −4.5 V ♦ RDS(on) = 1.5 W @ VGS = −2.7 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V • Gate−Source Zener for ESD Ruggedness. > 6 |
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