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FDV303N |
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| Part Number | FDV303N |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | These N−Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize ... |
| Features |
• 25 V, 0.68 A Continuous, 2 A Peak ♦ RDS(ON) = 0.45 Ω @ VGS = 4.5 V ♦ RDS(ON) = 0.6 Ω @ VGS= 2.7 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1 V • Gate−Source Zener for ESD Ruggedness, > 6 kV Human Body Model • Compact Industry Standard SOT−23 Surface Mount Package • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant www.onsemi.com SOT−23 (TO−236) CASE 318−08 STYLE 21 MARKING DIAGRAM Drain 3 A303MG G 1 Gate 2 Source Aor blank = One/two character Loacation Code 303 = Specific Device Code M = Date Code G = Pb−Free Packa... |
| Document |
 FDV303N Data Sheet
PDF 261.90KB |
| Distributor | Stock | Price | Buy |
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