FDV305N |
Part Number | FDV305N |
Manufacturer | Fairchild Semiconductor |
Description | This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 3... |
Features |
• 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) Applications • • • Load switch Battery protection Power management D D S SOT-23 G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 20 ± 12 0.9 2 0.35 –55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Charac... |
Document |
FDV305N Data Sheet
PDF 172.56KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDV301N |
Fairchild Semiconductor |
N-Channel Digital FET | |
2 | FDV301N |
ON Semiconductor |
N-Channel Digital FET | |
3 | FDV301N |
Kexin |
N-Channel MOSFET | |
4 | FDV301N-F169 |
ON Semiconductor |
N-Channel Digital FET | |
5 | FDV302P |
ON Semiconductor |
P-Channel Digital FET |