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FDV301N-F169 |
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| Part Number | FDV301N-F169 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N−Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to... |
| Features |
• 25 V, 0.22 A Continuous, 0.5 A Peak ♦ RDS(on) = 5 W @ VGS = 2.7 V ♦ RDS(on) = 4 W @ VGS = 4.5 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V • Gate−Source Zener for ESD Ruggedness. > 6 kV Human Body Model • Replace Multiple NPN Digital Transistors with One DMOS FET • This Device is Pb−Free and Halide Free Vcc D OUT IN G S GND Figure 1. Inverter Application DATA SHEET www.onsemi.com D G S SOT−23 CASE 318−08 MARKING DIAGRAM &E&Y 301&E&G &E = Designates Space &Y = Binary Calendar Year Coding Scheme 301 = Specific Device Cod... |
| Document |
 FDV301N-F169 Data Sheet
PDF 177.29KB |
| Distributor | Stock | Price | Buy |
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