No. | Partie # | Fabricant | Description | Fiche Technique |
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NXP |
UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation. APPLICATIONS • Communication transmitter applications (PCN/PCS) in the 1. |
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NXP |
UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (1.8 to 2.2 GHz). • Internal input and output matching for high gain and e |
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NXP |
VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Broadcast transmitters in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertic |
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NXP |
VHF power MOS transistor • High power gain • Low noise figure • Easy power control • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Large signal amplifier applications in the VHF frequency range. handbook, halfpage BLF246 PINNING - SOT121 PIN 1 2 3 4 |
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NXP |
VHF power MOS transistor • High power gain • Easy power control • Gold metallization ensures excellent reliability • Good thermal stability • Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amp |
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NXP |
UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Designed for broadband operation (2.0 to 2.2 GHz) • Internal input and output matching for high gain and efficiency • Improved linearity at backoff levels. 1 BLF2022-40 PINNING PIN 1 2 |
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NXP |
Power LDMOS transistor and benefits http://www.DataSheet4U.net/ High efficiency High power gain Excellent ruggedness Excellent thermal stability Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Internally matched Compliant |
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NXP |
Power LDMOS transistor and benefits High efficiency Easy power control Excellent ruggedness Excellent thermal stability Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Internally matched Compliant to Directive 2002/95/EC, r |
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NXP |
Power LDMOS transistor and benefits High efficiency High power gain Excellent ruggedness Excellent thermal stability Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of |
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NXP |
HF/VHF power MOS transistor • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Communications transmitters in the HF/VHF range with a nominal supply voltage of 12.5 V. DESCRIPTION Silicon N-channe |
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NXP |
UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on mounting base eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 2.2 GHz). handbook, halfpage BLF2043 PINNING - SOT538A PIN 1 2 |
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NXP |
UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (1.8 to 2 GHz) • Internal input and output matching for high gain and effi |
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NXP |
UHF push-pull power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 2.2 GHz). APPLICATIONS • Common source class-AB operation for PCN a |
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NXP |
VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applicatio |
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NXP |
VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS Large signal applications in the VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push- |
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NXP |
VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Large signal applications in the VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor e |
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NXP |
VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. DESCRIPTION 5 5 3 Top view BLF248 PIN CONFIGURATION 1 halfpage 2 d2 g2 g1 d1 MBB157 s Dual push-pull silicon N-channel enhanceme |
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NXP |
VHF power MOS transistor • High power gain • Easy power control • Good thermal stability DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output po |
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NXP |
UHF push-pull power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 2.2 GHz). APPLICATIONS • Common source class-AB operation for PCN a |
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NXP |
UHF power LDMOS transistor • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A – Output power = 20 W (AV) – Gain = 12 dB – Efficiency = 19% – ACPR = −42 dBc at 3.84 MHz • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stabil |
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