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BLF248 |
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| Part Number | BLF248 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | 5 5 3 Top view BLF248 PIN CONFIGURATION 1 halfpage 2 d2 g2 g1 d1 MBB157 s Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applica... |
| Features |
• High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. DESCRIPTION 5 5 3 Top view BLF248 PIN CONFIGURATION 1 halfpage 2 d2 g2 g1 d1 MBB157 s Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. PINNING - SOT262 A1 PIN 1 2 3 4 5 DESCRIPTION drain 1 dra... |
| Document |
 BLF248 Data Sheet
PDF 105.15KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BLF242 |
NXP |
HF/VHF power MOS transistor |
|
| 2 | BLF242 |
ASI |
HF-VHF POWER MOSFET |
|
| 3 | BLF2425M6L180P |
Ampleon |
Power LDMOS transistor |
|
| 4 | BLF2425M6L180P |
NXP |
Power LDMOS transistor |
|
| 5 | BLF2425M6LS180P |
Ampleon |
Power LDMOS transistor |
|