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MOSFET • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Containing a diode and high resistivity, short stability time is achieved during power-on. • Small package: SC-75 (USM) 1.0 TYP. 1.6 ±0.1 ORDERING INFORMATION PART NUMBER 2SK2552C P |
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RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD • Low VDD Use • Driving Battery : (VDS = 3.5 V) NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) • High Power Gain : GPS = 19.0 dB TYP. (f = 470 MHz) Embossed Type Taping 4 Pins Super Mini Mold • Suitable for use as RF amplifier in CATV |
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2SK2541 |
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RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD • Low VDD Use • Driving Battery 0.1 0.4 + – 0.05 : (VDS = 3.5 V) NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) GPS = 19.0 dB TYP. (f = 470 MHz) PACKAGE DIMENSIONS (Unit: mm) 0.2 2.8 + – 0.3 0.2 1.5 + – 0.1 0.1 0.4 + – 0.05 • Low |
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RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD • Low VDD Use • Driving Battery : (VDS = 3.5 V) NF = 1.8 dB TYP. (f = 900 MHz) GPS = 18.0 dB TYP. (f = 900 MHz) Embossed Type Taping 2.9±0.2 (1.8) PACKAGE DIMENSIONS (Unit: mm) 2.8 +0.2 –0.3 1.5 +0.2 –0.1 2 3 0.4 +0.1 – 0.05 4 0.4 +0.1 – 0.05 0.95 |
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RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD • Low VDD Use • Driving Battery • Low Noise Figure : • High Power Gain : NF = 1.8 dB TYP. (f = 900 MHz) GPS = 18.0 dB TYP. (f = 900 MHz) Embossed Type Taping 1.25 PACKAGE DIMENSIONS : (VDS = 3.5 V) 0.3 +0.1 –0.05 (Unit: mm) 2.1±0.2 1.25±0.1 2 3 0.3 |
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SWITCHING N-CHANNEL POWER MOS FET • Super Low On-Resistance RDS (on)1 = 20 mΩ (VGS = 10 V, ID = 20 A) RDS (on)2 = 30 mΩ (VGS = 4 V, ID = 20 A) 15.0±0.3 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 • Low Ciss Ciss = 1 600 pF TYP. • Built-in G-S Protection Diode ABSOLUTE MAXIMU |
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SWITCHING N-CHANNEL POWER MOS FET • Super Low On-Resistance RDS (on)1 = 27 mΩ (VGS = 10 V, ID = 20 A) RDS (on)2 = 40 mΩ (VGS = 4 V, ID = 20 A) 1.0 15.7 MAX. 4 3.2±0.2 20.0±0.2 6.0 • Low Ciss Ciss = 1 210 pF TYP. • Built-in G-S Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 |
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SWITCHING N-CHANNEL POWER MOS FET • Low On-Resistance RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A) RDS (on)2 = 23 mΩ (VGS = 4 V, ID = 23 A) 15.0±0.3 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 • Low Ciss Ciss = 2 100 pF TYP. • Built-in G-S Protection Diode ABSOLUTE MAXIMUM RATI |
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NEC |
SWITCHING N-CHANNEL POWER MOS FET 15.7 MAX. 4 3.2±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storag |
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SWITCHING N-CHANNEL POWER MOS FET • Super Low On-Resistance RDS (on)1 = 9 mΩ (VGS = 10 V, ID = 25 A) RDS (on)2 = 14 mΩ (VGS = 4 V, ID = 25 A) 1.0 15.7 MAX. 4 3.2±0.2 20.0±0.2 6.0 • Low Ciss Ciss = 3 400 pF TYP. • Built-in G-S Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚ |
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Silicon N-Channel MOSFET |
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N-Channel MOSFET • High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz) PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz) • Low intermodulation distortion • Covers all base station frequencies such as 800-MHz PDC and GSM • High-reliability gold electrodes • He |
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N-Channel MOSFET 3 0 to 0.1 2 0.2 +0.1 –0 0.5 TYP. 0.5 TYP. 1 0.6 TYP. 0.75 ±0.05 1.0 TYP. 1.6 ±0.1 ORDERING INFORMATION PART NUMBER 2SK2552B PACKAGE SC-75 (USM) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = −1.0 V) Gate to Drain Voltage D |
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