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2SK2597 |
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| Part Number | 2SK2597 |
| Manufacturer | NEC |
| Description | PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • High output, hi... |
| Features |
• High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz) PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz) • Low intermodulation distortion • Covers all base station frequencies such as 800-MHz PDC and GSM • High-reliability gold electrodes • Hermetic sealed package • Internal matching circuit • Push-pull structure PACKAGE DRAWING (Unit: mm) 45˚ G1 S G2 45˚ φ 3.3±0.3 11.4±0.3 19.4±0.4 D1 D2 1.4 3.2±0.2 ±0.3 3.2±0.2 13.5±0.3 28.0±0.3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Drain-source voltage Gate-source voltage Drain current (D.C.) Total power dissipation Thermal resistance... |
| Document |
 2SK2597 Data Sheet
PDF 101.63KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK259 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 2 | 2SK2590 |
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| 3 | 2SK2590 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 4 | 2SK2590 |
Renesas |
Silicon N-Channel MOSFET |
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| 5 | 2SK2593 |
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