3SK255 |
Part Number | 3SK255 |
Manufacturer | NEC |
Description | DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low VDD Use • Driving Battery • Low Noi... |
Features |
• Low VDD Use • Driving Battery • Low Noise Figure : • High Power Gain : NF = 1.8 dB TYP. (f = 900 MHz) GPS = 18.0 dB TYP. (f = 900 MHz) Embossed Type Taping 1.25 PACKAGE DIMENSIONS : (VDS = 3.5 V) 0.3 +0.1 –0.05 (Unit: mm) 2.1±0.2 1.25±0.1 2 3 0.3 +0.1 –0.05 4 • Suitable for uses as RF amplifier in UHF TV tuner. • Small Package : 4 Pins Super Mini Mold 2.0±0.2 0.65 • Automatically Mounting : ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total Power Dissipation Chann... |
Document |
3SK255 Data Sheet
PDF 54.90KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | 3SK252 |
NEC |
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD | |
2 | 3SK253 |
NEC |
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD | |
3 | 3SK254 |
NEC |
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD | |
4 | 3SK256 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET | |
5 | 3SK257 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |