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NEC |
2SK2275 • Low On-state Resistance RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 2.0 A) • LOW Ciss Ciss = 1 000 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ± |
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NEC |
2SK2234 |
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NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR • The Characteristic of Cross-Modulation is good. CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB • Low Noise Figure: • High Power Gain: • Enhancement Type. 2.9±0.2 (1.8) PACKAGE DIMENSIONS (Unit: mm) 2.8 –0.3 +0.2 +0.2 +0.2 0.4 –0.3 NF2 = 0.9 dB TYP |
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NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR • The Characteristic of Cross-Modulation is good. CM = 92 dBµ TYP. @ f = 200 MHz, GR = –30 dB PACKAGE DIMENSIONS (Unit: mm) 0.4 +0.1 –0.05 1.5 +0.2 –0.1 2.8 +0.2 –0.3 • Low Noise Figure: • High Power Gain: • Enhancement Type. NF1 = 1.2 dB TYP. (f |
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NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR • Low Noise Figure: • High Power Gain: • Automatically Mounting: • Small Package: NF = 1.8 dB TYP. (f = 900 MHz) GPS = 17 dB TYP. (f = 900 MHz) PACKAGE DIMENSIONS (Unit: mm) 0.4 –0.05 0.4 –0.05 0.4 –0.05 0.16 –0.06 +0.1 +0.1 Embossed Type Taping 4 Pin |
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NEC |
SWITCHING N-CHANNEL POWER MOSFET φ3.2 ± 0.2 • • • Low On-state Resistance RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 2.0 A) 3 ± 0.1 1 2 3 4 ± 0.2 12.0 ± 0.2 13.5 MIN. 0.65 ± 0.1 LOW Ciss Ciss = 1 000 pF TYP. High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) |
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NEC |
MOS Field Effect Power Transistor |
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