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3SK224 |
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| Part Number | 3SK224 |
| Manufacturer | NEC |
| Description | DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure: • High Power Gain: • Aut... |
| Features |
• Low Noise Figure: • High Power Gain: • Automatically Mounting: • Small Package: NF = 1.8 dB TYP. (f = 900 MHz) GPS = 17 dB TYP. (f = 900 MHz) PACKAGE DIMENSIONS (Unit: mm) 0.4 –0.05 0.4 –0.05 0.4 –0.05 0.16 –0.06 +0.1 +0.1 Embossed Type Taping 4 Pins Mini Mold 2.9±0.2 (1.8) 0.85 0.95 2 3 4 5° +0.1 • Suitable for use as RF amplifier in UHF TV tuner. 2.8 –0.1 +0.2 1.5 –0.1 +0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total Power Dissipation Channel Temperature S... |
| Document |
 3SK224 Data Sheet
PDF 53.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3SK22 |
Toshiba |
Silicon N-Channel Transistor |
|
| 2 | 3SK222 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 3 | 3SK223 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 4 | 3SK225 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 5 | 3SK226 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|