K2275 |
Part Number | K2275 |
Manufacturer | NEC |
Description | The 2SK2275 is N-channel Power MOS Field Effect Transis- tor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) FEATURES • Low On-state Resistance RDS(on) = 2.8 Ω ... |
Features |
• Low On-state Resistance RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 2.0 A) • LOW Ciss Ciss = 1 000 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID (DC) ±3.5 A Drain Current (pulse) ID (pulse)* ±14 A Total Power Dissipation (TC = 25 °C) PT1 35 W Total Power Dissipation (Ta = 25 °C) PT2 2.0 W Storage Temperature Tstg –55 to +150 °C Channel Temperature Tch 150 °C Single Avalanche Current IAS** 3.5 A Single Avalanche Energy EAS** 22 mJ *PW ≤ 10 ... |
Document |
K2275 Data Sheet
PDF 118.60KB |
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