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3SK222 |
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| Part Number | 3SK222 |
| Manufacturer | NEC |
| Description | DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • The Characteristic of Cross-M... |
| Features |
• The Characteristic of Cross-Modulation is good. CM = 92 dBµ TYP. @ f = 200 MHz, GR = –30 dB PACKAGE DIMENSIONS (Unit: mm) 0.4 +0.1 –0.05 1.5 +0.2 –0.1 2.8 +0.2 –0.3 • Low Noise Figure: • High Power Gain: • Enhancement Type. NF1 = 1.2 dB TYP. (f = 200 MHz) NF2 = 1.0 dB TYP. (f = 55 MHz) GPS = 23 dB TYP. (f = 200 MHz) (1.8) 0.85 0.95 2.9±0.2 2 • Automatically Mounting: • Small Package: Embossed Type Taping 4 Pins Mini Mold 1 5° 5° Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total Power Dissipation... |
| Document |
 3SK222 Data Sheet
PDF 58.20KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3SK22 |
Toshiba |
Silicon N-Channel Transistor |
|
| 2 | 3SK223 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 3 | 3SK224 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 4 | 3SK225 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 5 | 3SK226 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|