| No. | Partie # | Fabricant | Description | Fiche Technique |
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Motorola Inc |
MEDIUM POWER PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT tor Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VCES VCBO VEBO IC PD TJ, Tstg Value 80 90 5.0 500 1.5 12 – 65 to 150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C DEVICE MARKING BS3 THERMAL |
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Motorola Inc |
PNP SILICON HIGH VOLTAGE TRANSISTOR oltage (IC = –100 mAdc, IE = 0) Collector –Emitter Cutoff Current (VCE = –250 Vdc, IB = 0) Collector –Base Cutoff Current (VCB = –280 Vdc, IE = 0) Emitter –Base Cutoff Current (VEB = –6.0 Vdc, IC = 0) V(BR)CEO –300 V(BR)CBO –300 ICES — ICBO — IEBO — –20 |
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Motorola Inc |
NPN SILICON HIGH VOLTAGE TRANSISTOR 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (DC) Total Power Dissipation @ TA |
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Motorola Inc |
SOT.223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (DC) Total Power Dissipation @ TA |
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Motorola Inc |
MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT or Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VCES VCBO VEBO IC PD TJ, Tstg Value 80 90 5.0 500 0.8 6.4 – 65 to 150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C DEVICE MARKING AS3 THERMAL |
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