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BSP62T1 |
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| Part Number | BSP62T1 |
| Manufacturer | Motorola Inc |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSP62T1/D PNP Small-Signal Darlington Transistor This PNP small signal darlington transistor is designed for use in switching applicatio... |
| Features |
tor Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VCES VCBO VEBO IC PD TJ, Tstg Value 80 90 5.0 500 1.5 12 – 65 to 150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C DEVICE MARKING BS3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RθJA TL Max 83.3 260 10 Unit °C/W °C Sec 1. Device mounted on a FR –4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in... |
| Document |
 BSP62T1 Data Sheet
PDF 179.05KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP62 |
NXP |
PNP Darlington transistors |
|
| 2 | BSP62 |
Siemens Semiconductor Group |
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
|
| 3 | BSP62 |
Infineon Technologies AG |
PNP Silicon Darlington Transistors |
|
| 4 | BSP60 |
NXP |
PNP Darlington transistors |
|
| 5 | BSP60 |
Infineon Technologies AG |
PNP Silicon Darlington Transistors |
|