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BSP20AT1 |
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| Part Number | BSP20AT1 |
| Manufacturer | Motorola Inc |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSP19AT1/D NPN Silicon Epitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose am... |
| Features |
318E-04, STYLE 1 TO-261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (DC) Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ BSP19A 350 400 5.0 1000 0.8 6.4 – 65 to 150 150 BSP20A 250 300 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C °C DEVICE MARKING SP19A SP20A THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction-to-Ambient Maximum Temperature for... |
| Document |
 BSP20AT1 Data Sheet
PDF 119.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP20A |
Kexin |
NPN Silicon Epitaxial Transistor |
|
| 2 | BSP20 |
NXP |
NPN high-voltage transistors |
|
| 3 | BSP204 |
NXP |
P-channel enhancement mode vertical D-MOS transistor |
|
| 4 | BSP204A |
NXP |
P-channel enhancement mode vertical D-MOS transistor |
|
| 5 | BSP205 |
NXP |
P-channel enhancement mode vertical D-MOS transistor |
|