BSP16T1 |
Part Number | BSP16T1 |
Manufacturer | Motorola Inc |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSP16T1/D SOT-223 Package High Voltage Transistor PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 BSP16T1 Motorola Preferred Device SOT–223... |
Features |
oltage (IC = –100 mAdc, IE = 0) Collector –Emitter Cutoff Current (VCE = –250 Vdc, IB = 0) Collector –Base Cutoff Current (VCB = –280 Vdc, IE = 0) Emitter –Base Cutoff Current (VEB = –6.0 Vdc, IC = 0) V(BR)CEO –300 V(BR)CBO –300 ICES — ICBO — IEBO — –20 –1.0 µAdc –50 µAdc — µAdc — Vdc Vdc 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola Small... |
Document |
BSP16T1 Data Sheet
PDF 109.16KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BSP16T1 |
ON Semiconductor |
High Voltage Transistors | |
2 | BSP16T1G |
ON Semiconductor |
High Voltage Transistors | |
3 | BSP16 |
NXP |
PNP high-voltage transistor | |
4 | BSP16 |
Zetex Semiconductors |
PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
5 | BSP100 |
NXP |
N-channel enhancement mode TrenchMOS transistor |