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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCTW60N120G2AG VDS 1200 V RDS(on) typ. 45 mΩ ID 52 A HiP247 D(2, TAB) G(1) S(3) 3 2 1 • AEC-Q101 qualified • High speed switching performance • Very fast and robust intrinsic body diode • Low capacitances • Very high operating juncti |
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STMicroelectronics |
Silicon carbide Power MOSFET Order code VDS RDS(on) max. SCTH90N65G2V-7 650 V 24 mΩ • Very high operating junction temperature capability (TJ = 175 °C) • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitances ID 116 A Applications • |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCT040W120G3AG VDS 1200 V RDS(on) typ. 40 mΩ ID 40 A HiP247 3 2 1 D(2, TAB) • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCT060HU75G3AG VDS 750 V RDS(on) typ. 58 mΩ ID 30 A • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for incr |
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STMicroelectronics |
Silicon carbide Power MOSFET Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 °C) Very fast and robust intrinsic body diode Low capacitance Applications Figure 1: Internal schematic diagram Solar inv |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCTH35N65G2V-7AG VDS 650 V RDS(on) max. 67 mΩ ID 45 A • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source sensing pin for increased efficiency Applications • Main |
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STMicroelectronics |
Silicon carbide Power MOSFET Order code VDS RDS(on) max. SCTW90N65G2V 650 V 24 mΩ • Very high operating junction temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitances ID 119 A Applications • S |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCT070HU120G3AG VDS 1200 V RDS(on) typ. 63 mΩ ID 30 A • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for in |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCTWA35N65G2V4AG VDS 650 V RDS(on) max. 67 mΩ ID 45 A HiP247-4 2 34 1 Drain(1, TAB) • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Low capacitances • Source sensing pin for increased efficiency • Very high operat |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code 23 SCTHS200N120G3AG VDS 1200 V RDS(on) typ. 9.3 mΩ ID 170 A 1 • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very hig |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCTW35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 D(2, TAB) G(1) S(3) 3 2 1 • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Low capacitance Applications • Switching mode power supply • EV chargers • DC-DC |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCT040H65G3SAG VDS 650 V RDS(on) max. 55 mΩ ID 30 A • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for incr |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCTH60N120G2-7AG VDS 1200 V RDS(on) max. 58 mΩ ID 55 A • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source sensing pin for increased efficiency Applications • Main |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCT015W120G3-4AG VDS 1200 V RDS(on) typ. 15 mΩ ID 129 A HiP247-4 2 34 1 Drain(1, TAB) • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction |
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STMicroelectronics |
Silicon carbide Power MOSFET TO-LL Order code VDS RDS(on) typ. ID SCT040TO65G3 650 V 40 mΩ 35 A • Very fast and robust intrinsic body diode • Very low RDS(on) over the entire temperature range • High speed switching performances • Source sensing pin for increased e |
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STMicroelectronics |
Silicon carbide Power MOSFET Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 °C) Very fast and robust intrinsic body diode Low capacitance Applications Figure 1: Internal schematic diagram Solar inv |
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Micro Electronics |
MINI-LAN SMD PCMCIA TRANSFORMER |
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Micro Electronics |
SMD MODEM TRANSFORMER |
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Micro Electronics |
PCMCIA TRANSFORMER |
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STMicroelectronics |
FAN SPEED CONTROLER Built in thermal sensor Brushless DC fan speed control Linear control and regulation of the fan speed according to the temperature Green OFF mode operation with automatic turn- ON in case of overtemperature Voltage limitation above fan stall voltage |
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