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SCTW90N65G2V |
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| Part Number | SCTW90N65G2V |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and ... |
| Features |
Order code
VDS
RDS(on) max.
SCTW90N65G2V
650 V
24 mΩ
• Very high operating junction temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitances ID 119 A Applications • Switching applications • Power supply for renewable energy systems • High frequency DC-DC converters AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching ... |
| Document |
 SCTW90N65G2V Data Sheet
PDF 397.46KB |
| Distributor | Stock | Price | Buy |
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