SCT040H65G3SAG |
Part Number | SCT040H65G3SAG |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature ... |
Features |
Order code SCT040H65G3SAG
VDS 650 V
RDS(on) max. 55 mΩ
ID 30 A
• AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The d... |
Document |
SCT040H65G3SAG Data Sheet
PDF 223.07KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SCT040H65G3AG |
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2 | SCT040H120G3AG |
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3 | SCT040HU65G3AG |
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4 | SCT040TO65G3 |
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5 | SCT040W120G3-4AG |
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