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SCTW60N120G2AG |
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| Part Number | SCTW60N120G2AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching ... |
| Features |
Order code SCTW60N120G2AG
VDS 1200 V
RDS(on) typ. 45 mΩ
ID 52 A
HiP247
D(2, TAB)
G(1) S(3)
3 2 1
• AEC-Q101 qualified • High speed switching performance • Very fast and robust intrinsic body diode • Low capacitances • Very high operating junction temperature capability (TJ = 200 °C) Applications • DC-DC converters • Solar Inverters and renewable energy • SMPS • OBC AM01475v1_noZen Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switc... |
| Document |
 SCTW60N120G2AG Data Sheet
PDF 192.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SCTW60N120G2 |
STMicroelectronics |
Silicon carbide Power MOSFET |
|
| 2 | SCTW100N120G2AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
|
| 3 | SCTW100N65G2AG |
STMicroelectronics |
silicon carbide Power MOSFET |
|
| 4 | SCTW35N65G2V |
STMicroelectronics |
Silicon carbide Power MOSFET |
|
| 5 | SCTW35N65G2VAG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
|