| No. | Partie # | Fabricant | Description | Fiche Technique |
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MT Semiconductor |
N+P-Channel Enhancement Mode Field Effect Transistor • Q1: N-Channel 7A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V • Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V • Fast switching speed • High power and handling capability in a widel |
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Austin Semiconductor |
4 MEG x 1 DRAM FAST PAGE MODE • Industry standard x1 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ± 10% power supply • Low-power, 2.5mW standby; 300mW active, typical • All inputs, outputs and clocks are fully TTL and CMOS comp |
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MT Semiconductor |
Dual N & P-Channel PowerTrench MOSFET • N-Channel 30V/5A, RDS (ON) = 28mΩ (max.) @ VGS =4.5V RDS (ON) = 38mΩ (max.) @ VGS =2.5V • P-Channel -30V/-4.6A, RDS (ON) = 63mΩ (max.) @ VGS =-4.5V RDS (ON) = 85mΩ (max.) @ VGS = -2.5V General Description These dual N and P-Channel enhancement mod |
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Hynix Semiconductor |
DDR3L SDRAM • Power Supply: VDD=1.35V (1.283V to 1.45V) • VDDQ = 1.35V (1.283V to 1.45V) • VDDSPD=3.0V to 3.6V • Backward Compatible with 1.5V DDR3 Memory module • 8 internal banks • Data transfer rates: PC3-14900, PC3-12800, PC3-10600, PC3-8500 • Bi-direct |
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Hynix Semiconductor |
DDR3L SDRAM • Power Supply: VDD=1.35V (1.283V to 1.45V) • VDDQ = 1.35V (1.283V to 1.45V) • VDDSPD=3.0V to 3.6V • Backward Compatible with 1.5V DDR3 Memory module • 8 internal banks • Data transfer rates: PC3-14900, PC3-12800, PC3-10600, PC3-8500 • Bi-directional |
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Micron Semiconductor |
(MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V –1.95V VCC 1.70V –2.25V VCCQ (Option W) • Random Access Time: 70ns • Burst Mode Write Access Continuous burst • Burst Mode Read Access 4, 8, or 16 words, or co |
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Hynix Semiconductor |
DDR3L SDRAM • Power Supply: VDD=1.35V (1.283V to 1.45V) • VDDQ=1.35V (1.283 to 1.45V) • VDDSPD=3.0V to 3.6V • Backward Compatible with 1.5V DDR3 Memory module • 8 internal banks • Data transfer rates: PC3-12800, PC3-10600, PC3-8500 • Bi-directional Differential |
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Hynix Semiconductor |
DDR3 SDRAM • VDD=1.5V +/- 0.075V • VDDQ=1.5V +/- 0.075V • VDDSPD=3.0V to 3.6V • 8 internal banks • Data transfer rates: PC3-14900, PC3-12800, PC3-10600,PC3-8600 • Bi-directional Differential Data Strobe • 8 bit pre-fetch • Burst Length (BL) switch on-the-fly: B |
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Hynix Semiconductor |
DDR3 SDRAM and Ordering Information 1.1.1 Features 1.1.2 Ordering Information 1.2 Speed Grade & Key Parameters 1.3 Address Table 2. Pin Architecture 2.1 Pin Definition 2.2 Input/Output Functional Description 2.3 Pin Assignment 3. Functional Block Diagram 3.1 4G |
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Hynix Semiconductor |
DDR3L SDRAM • Power Supply: VDD=1.35V (1.283V to 1.45V) • VDDQ = 1.35V (1.283V to 1.45V) • VDDSPD=3.0V to 3.6V • Backward Compatible with 1.5V DDR3 Memory module • 8 internal banks • Data transfer rates: PC3-14900, PC3-12800, PC3-10600, PC3-8500 • Bi-directional |
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Hynix Semiconductor |
DDR3L SDRAM • Power Supply: VDD=1.35V (1.283V to 1.45V) • VDDQ = 1.35V (1.283V to 1.45V) • VDDSPD=3.0V to 3.6V • Backward Compatible with 1.5V DDR3 Memory module • 8 internal banks • Data transfer rates: PC3-14900, PC3-12800, PC3-10600, PC3-8500 • Bi-directional |
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Hynix Semiconductor |
DDR3 SDRAM • VDD=1.5V +/- 0.075V • VDDQ=1.5V +/- 0.075V • VDDSPD=3.0V to 3.6V • 8 internal banks • Data transfer rates: PC3-14900, PC3-12800, PC3-10600,PC3-8600 • Bi-directional Differential Data Strobe • 8 bit pre-fetch • Burst Length (BL) switch on-the-fly: B |
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Hynix Semiconductor |
DDR3 SDRAM • VDD=1.5V +/- 0.075V • VDDQ=1.5V +/- 0.075V • VDDSPD=3.0V to 3.6V • 8 internal banks • Data transfer rates: PC3-14900, PC3-12800, PC3-10600,PC3-8600 • Bi-directional Differential Data Strobe • 8 bit pre-fetch • Burst Length (BL) switch on-the-fly: B |
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MT Semiconductor |
Dual N & P-Channel PowerTrench MOSFET • Q1: N-Channel 7 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V RDS(on) = 40 mΩ @ VGS = 4.5V • Q2: P-Channel –7 A, –30 V RDS(on) = 25 mΩ @ VGS = –10V RDS(on) = 36 mΩ @ VGS = –4.5V DD1DD2DD2 DD1 SO-8 Pin 1 SO-8 SS1GS1SS2GG2 Q2 5 6 Q1 7 8 4 3 2 1 Ab |
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Zetex Semiconductors |
NPN SILICON PLANAR AVALANCHE TRANSISTOR * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL FMMT415 415 FMMT417 417 FMMT415 FMMT4 |
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Zetex Semiconductors |
SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS NIT CONDITIONS V V V IC=1mA, IB=0 IC=0.1mA, IE=0 IE=0.1mA, IC=0 VEB(off) =0.4V VEB(off) =3V µA VCE=35V µA VCE=35V 150 0.4 0.75 300 0.4 0.75 V V V V IC=0.1mA, VCE=1V IC=1mA, VCE=1V IC=10mA, VCE=1V IC=150mA, VCE=1V* IC=500mA, VCE=2V* IC=150mA,IB=15 |
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Hynix Semiconductor |
DDR3L SDRAM • Power Supply: VDD=1.35V (1.283V to 1.45V) • VDDQ = 1.35V (1.283V to 1.45V) • VDDSPD=3.0V to 3.6V • Backward Compatible with 1.5V DDR3 Memory module • 8 internal banks • Data transfer rates: PC3-14900, PC3-12800, PC3-10600, PC3-8500 • Bi-direct |
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Austin Semiconductor |
1 MEG x 4 DRAM Fast Page Mode DRAM • Industry standard x4 pinout, timing, functions, and packages • High-performance, CMOS silicon-gate process • Single +5V±10% power supply • Low-power, 2.5mW standby; 300mW active, typical • All inputs, outputs, and clocks are fully TTL and CMOS comp |
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Micron Semiconductor |
(MT45WxMx16PFA) Async Cellularram Memory • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns, 85ns Intrapage read access: 20ns, 25ns • VCC, VCCQ Voltages 1.70V –1.95V VCC 1.70V –2.25V VCCQ (Option W |
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Micron Semiconductor |
(MT45WxMx16PFA) Async Cellularram Memory • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns, 85ns Intrapage read access: 20ns, 25ns • VCC, VCCQ Voltages 1.70V –1.95V VCC 1.70V –2.25V VCCQ (Option W |
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