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MT4606 |
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| Part Number | MT4606 |
| Manufacturer | MT Semiconductor |
| Description | These dual N- and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-st... |
| Features |
• Q1: N-Channel 7A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V • Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V • Fast switching speed • High power and handling capability in a widely used surface mount package DD2 DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S1 S S S Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1a) Power Dissipation for Dual Operation Power Dissipation for Single... |
| Document |
 MT4606 Data Sheet
PDF 476.85KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT4600 |
Matrix Microtech |
P & N-Channel 100-V(D-S) MOSFET |
|
| 2 | MT4600 |
MT Semiconductor |
Dual N & P-Channel PowerTrench MOSFET |
|
| 3 | MT4601B02-1 |
CSOT |
LCD Module |
|
| 4 | MT4601B02-2 |
CSOT |
LCD Module |
|
| 5 | MT4607 |
MT Semiconductor |
Dual N & P-Channel PowerTrench MOSFET |
|