| No. | Partie # | Fabricant | Description | Fiche Technique |
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JCET |
N-Channel MOSFET TrenchFET Power MOSFET APPLICATIONS z Load Switch z Battery Switch TO-2 51-3L 1. GATE 2. DRAIN 3. SOURCE Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS Continuous Drain Curren |
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JCET |
N-Channel MOSFET z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-251S 1. GATE 2. DRAIN 3. SOURCE 1 23 MARKING EQUIVALENT CIRCUIT CJD04N65 zXXX CJD04N65 = Device co |
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JCET |
N-Channel MOSFET z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified MARKING CJD05N60B B z XXX CJD05N60B= Device code Solid dot = Green molding compound device, if none, the |
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JCET |
P-Channel MOSFET TrenchFET Power MOSFET APPLICATIONS z Load Switch z Battery Switch TO-251-3L 1. GATE 2. DRAIN 3. SOURCE 1 2 3 MARKING EQUIVALENT CIRCUIT CJD4435= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code |
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JCET |
N-Channel Power MOSFET z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified MARKING EQUIVALENT CIRCUIT CJD044N60 z XXX CJD04N60 = Device code Solid dot = Green molding compound devi |
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JCET |
N-Channel Power MOSFET High density cell design for ultra low RDS(on) Special process technology for high ESD capability Fully characterized avalanche voltage and current Excellent package for good heat dissipation Good stability and uniformity with high EAS |
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JCET |
N-Channel MOSFET z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified 1. GATE 2. DRAIN 3. SOURCE 1 23 MARKING EQUIVALENT CIRCUIT CJD02N65 z XXX CJD02N60 = Device code Solid |
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JCET |
N-Channel MOSFET z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-251S 1. GATE 2. DRAIN 3. SOURCE 1 23 MARKING EQUIVALENT CIRCUIT CJD04N60A XXX CJD04N60A =Device co |
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JCET |
N-Channel MOSFET z Robust High Voltage Termination z Avalanche Energy Specified z Sour |
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JCET |
N-Channel Power MOSFET z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discre |
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JCET |
N-Channel MOSFET z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified MARKING EQUIVALENT CIRCUIT CJD04N60B z XXX CJD04N60B = Device code Solid dot = Green molding compound de |
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