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CJD4435 |
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| Part Number | CJD4435 |
| Manufacturer | JCET |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD4435 P-Channel 30-V(D-S) MOSFET V(BR)DSS -30 9 RDS(on)MAX 24Pȍ#-9 35Pȍ#-9 ID -9.1$ FEATURE TrenchF... |
| Features |
tatic
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =-250µA
Gate-source threshold voltage
VGS(th)
VDS =VGS, ID =-250µA
Gate-source leakage
IGSS
VDS =0V, VGS =±20V
Zero gate voltage drain current
IDSS
VDS =-30V, VGS =0V
Drain-source on-state resistance (note 3)
RDS(on)
VGS =-10V, ID =-9.1A VGS =-4.5V, ID =-6.9A
Forward transconductance (note 3)
gfs
VDS =-10V, ID =-9.1A
Dynamic (note 4)
Input capacitance
Ciss
Output capacitance
Coss
VDS =-15V,VGS =0V,f =1MHz
Reverse transfer capacitance
Crss
Turn-on delay time Rise time Turn-off delay time Fall time
td(on) tr
td... |
| Document |
 CJD4435 Data Sheet
PDF 837.58KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | CJD4410 |
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| 2 | CJD44H11 |
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| 3 | CJD45H11 |
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| 4 | CJD47 |
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| 5 | CJD01N60 |
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